Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer
نویسندگان
چکیده
منابع مشابه
Stabilization mechanism for the polar ZnO(0001̄)-O surface
When wurtzite ZnO is sliced perpendicular to the (0001) axis, two different polar surfaces, the (0001)-Zn and (0001̄)-O terminated surfaces, are formed. In a simple ionic picture, both surfaces are electrostatically unstable due to a diverging electrostatic energy. Although the ionic picture is an oversimplification, the surfaces adopt a modified surface structure to compensate for the polarity....
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Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO...
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The reactivity of immobilized functional groups in thin layers of (3-aminopropy1)triethoxy~ilane (APS), (3-mercaptopropyl)trimethoxy~ilane, (3-bromopropyl)trimethoxysilane, and (8-bromoody1)trimethoxysilane on oxidized aluminum substrates was studied with reflection-adsorption infrared spectroscopy (RAIR), optical ellipsometry and contact-angle measurements. Mass changes on the surface associat...
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On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2956419